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RIC7S113A4 - RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Datasheet Summary

Description

The RIC7S113A4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Ou.

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Datasheet Details

Part number RIC7S113A4
Manufacturer International Rectifier
File Size 230.71 KB
Description RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
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PD-97826 RIC7S113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs n Hermetically Sealed n Lightweight Absolute Maximum Ratings VOFFSET IO+/VOUT ton/off (typ.) Delay Matching(typ.) 400V max.
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