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JANSR2N7550U2 - POWER MOSFET

JANSR2N7550U2 Description

PD-94493D IRHNA597160 JANSR2N7550U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA597160 10.
IR HiRel R5 technology provides high performance power MOSFETs for space applications.

JANSR2N7550U2 Features

* Single Event Effect (SEE) Hardened
* Ultra Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requiremen

JANSR2N7550U2 Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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POWER MOSFET International Rectifier
International Rectifier JANSR2N7550U2-like datasheet