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JANSR2N7520T3 RADIATION HARDENED POWER MOSFET

JANSR2N7520T3 Description

PD-96911A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary IRHYS597034CM JANSR2N7520T3 60V, P-CHANNEL REF: MIL-PRF-195.

JANSR2N7520T3 Features

* TO-257AA n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maxi

JANSR2N7520T3 Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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RADIATION HARDENED POWER MOSFET International Rectifier
International Rectifier JANSR2N7520T3-like datasheet