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JANSR2N7281 - Radiation Hardened/ N-Channel Power MOSFET

Features

  • 2A, 500V, rDS(ON) = 2.50Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 8nA Per-RAD (Si)/s Typically.
  • Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G S Ordering Information PART NUMBER JANSR2N7281.

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Other Datasheets by Intersil (Renesas)

Part Number Description
JANSR2N7272 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7275 5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7278 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7292 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7294 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JANSR2N7281 Formerly FRL430R4 Data Sheet November 1998 File Number 4294 Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
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