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IRL6903 POWER MOSFET

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Description

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* B- 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - DR AIN 3 - SOURCE 4 - DR AIN 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 2 . 5 4 ( .1 0 0 ) 3X 0 . 9 3 ( .0 3 7 ) 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M 3X 0.5 5 (.02 2) 0.4 6 (.01 8) 2 .9 2 (. 1 1 5 ) 2 .6 4

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter

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