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IRL620S POWER MOSFET

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Previous Datasheet Index Next Data Sheet PD -9.1218 IRL620S HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repet.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface-mount application. VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C Continuous Drain Current, VGS @ 5.

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