IRL630 POWER MOSFET

International Rectifier

Description

Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate .
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Datasheet Specifications

Part number: IRL630
Manufacturer: International Rectifier
File Size: 234.29 KB
Datasheet: IRL630_InternationalRectifier.pdf
Description: POWER MOSFET

Features

* , UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave. , Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg. , 2F, 3-30-4 Nishi-Ike

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 2

IRL630 Distributors

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IRL630 POWER MOSFET International Rectifier

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