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IRL620 POWER MOSFET

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Previous Datasheet Index Next Data Sheet PD -9.1217 IRL620 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate .
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Datasheet Specifications

Part number
IRL620
Manufacturer
International Rectifier
File Size
358.01 KB
Datasheet
IRL620_InternationalRectifier.pdf
Description
POWER MOSFET

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 200V RDS(on) = 0.80 Ω ID = 5.2A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 2

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