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IRHNM57110 RADIATION HARDENED POWER MOSFET

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Description

PD-97192B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads.

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Datasheet Specifications

Part number
IRHNM57110
Manufacturer
International Rectifier
File Size
245.20 KB
Datasheet
IRHNM57110_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary P-Channel Available IRHNM597110, IRHNMC597110 Absolute Maximum Ratings Parameter ID @

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain

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