Datasheet4U.com

IRHN7130 - Radiation Hardened Power MOSFET

International Rectifier

📥 Download Datasheet

IRHN7130 Datasheet Preview — Preview of IRHN7130 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IRHN7130
Manufacturer	International Rectifier
File Size	1.14 MB
Description	Radiation Hardened Power MOSFET
Datasheet	IRHN7130_InternationalRectifier.pdf

IRHN7130 Product details

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

Features

Single event effect (SEE) hardened.
Low RDS(on).
Low total gate charge.
Proton tolerant.
Simple drive requirements.
Hermetically sealed.
Ceramic package.
Light weight.
ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
BVDSS: 100V.
ID : 14A.
RDS(on),max : 180m.
QG,max : 45nC Potential.

📁 IRHN7130 Similar Datasheet

IRH-12-12.5-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
IRH-24-6.3-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
IRH-5-30-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
IRH3 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
IRH310 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
IRH320 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
IRH360 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
IRHM2C50SE - N-Channel Transistor (IRF)

Other Datasheets by International Rectifier

IRHN7150 - Radiation Hardened Power MOSFET
IRHN7230 - N-Channel Transistor
IRHN7250 - Radiation Hardened Power MOSFET
IRHN7250SE - Radiation Hardened Power MOSFET
IRHN7450 - (IRHN7450 / IRHN8450) HEXFET TRANSISTOR
IRHN7450SE - TRANSISTOR N-CHANNEL

Published: Oct 15, 2006 |