IRHN7230 - N-Channel Transistor

International Rectifier

Datasheet Details

Part number	IRHN7230
Manufacturer	International Rectifier
File Size	606.47 KB
Description	N-Channel Transistor
Datasheet	IRHN7230_InternationalRectifier.pdf

s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°.

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Published: Oct 15, 2006 |