IRHNM57214SE N-CHANNEL POWER MOSFET

International Rectifier

Description

PD-97818C IRHNM57214SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE.
IR HiRel R5 technology provides high performance power MOSFETs for space applications.

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Datasheet Specifications

Part number: IRHNM57214SE
Manufacturer: International Rectifier
File Size: 547.51 KB
Datasheet: IRHNM57214SE-InternationalRectifier.pdf
Description: N-CHANNEL POWER MOSFET

Features

* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requirements
* Ease of Paralleling
* Hermetically Sealed
* Surface Mount
* Ceramic Package
* Light Weight
* ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Ma

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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IRHNM57214SE N-CHANNEL POWER MOSFET International Rectifier

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