IRGIB7B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Name: IRGIB7B60KDPBF
SKU: IRGIB7B60KDPBF-596119

International Rectifier

The IRGIB7B60KDPBF by International Rectifier is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	IRGIB7B60KDPBF
Manufacturer	International Rectifier
File Size	941.53 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB7B60KDPBF_InternationalRectifier.pdf
Additional preview pages of the IRGIB7B60KDPBF datasheet.

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free G E C VCES = 600V IC = 8.0A, TC=100°C tsc > 10µs, TJ=150°C n-ch an nel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing.

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Published: Aug 17, 2007 |