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IRGB4B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGB4B60KD1PBF
Manufacturer: International Rectifier
File Size: 437.61 KB
Datasheet: IRGB4B60KD1PBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGB4B60KD1PBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transien.

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Published: May 30, 2007 |