IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGB4059DPbF
Manufacturer: International Rectifier
File Size: 286.93 KB
Datasheet: IRGB4059DPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts Tested for 4X Rated Current (ILM)
* Positive VCE (on) Temperature Coefficient.
* Ultra Fas

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI Absolute Maximum Ratings Parameter VCES IC@ TC = 2

IRGB4059DPbF Distributors

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IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB4059DPbF-like datasheet