IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGB4062DPBF
Manufacturer: International Rectifier
File Size: 430.21 KB
Datasheet: IRGB4062DPBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ult

Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI E GC TO-220AB IRGB4062DPbF G Gate E GC E GC TO-24

IRGB4062DPBF Distributors

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IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB4062DPBF-like datasheet