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IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4064DPbF Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGB4064DPbF Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co-

IRGB4064DPbF Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI PD - 97113 IRGB4064DPbF C G E n-channel C VCES = 6

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