Datasheet4U Logo Datasheet4U.com

IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4045DPbF Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGB4045DPbF Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co

IRGB4045DPbF Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES =

📥 Download Datasheet

Preview of IRGB4045DPbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGB4045DPbF-like datasheet