IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

📥 Download Datasheet

IRGB4045DPbF Datasheet Preview — Preview of IRGB4045DPbF PDF

Datasheet Specifications

Part number: IRGB4045DPbF
Manufacturer: International Rectifier
File Size: 378.71 KB
Datasheet: IRGB4045DPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175 °C
* 5µs SCSOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES =

IRGB4045DPbF Distributors

📁 Related Datasheet

IRGB4620DPbF IRGB4630DPbF IRGB4640DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S

📌 All Tags

IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB4045DPbF-like datasheet