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IRGB4715DPbF, IRGS4715DPBF Insulated Gate Bipolar Transistor

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Description

  VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 8A Applications * Industrial Motor Drive * U.

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This datasheet PDF includes multiple part numbers: IRGB4715DPbF, IRGS4715DPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGB4715DPbF, IRGS4715DPBF
Manufacturer
International Rectifier
File Size
642.58 KB
Datasheet
IRGS4715DPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGB4715DPbF, IRGS4715DPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C G E n-channel G CE IRG

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRGB4715DPbF Distributors

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