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IRG8P60N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

  VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC.

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Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRG8P60N120KDPbF Distributors

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