Datasheet Specifications
- Part number
- IRG8B08N120KDPbF
- Manufacturer
- International Rectifier
- File Size
- 625.52 KB
- Datasheet
- IRG8B08N120KDPbF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recover.
Features
* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel GCE TO-220AB IRG8B08N120KDPbF GCE TO-247AC IRG8P08N120KDPbF GC E TO-247AD IRG8P08N120KD-EPbF G Gate C Collector E Emitter BenefitsApplications
* Industrial Motor DriveIRG8B08N120KDPbF Distributors
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