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IRG4PH50S-EPBF INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT .

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Features

* • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V

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