IRFU540ZPbF, IRFR540ZPbF HEXFET Power MOSFET

International Rectifier

Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

IRFU540ZPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFU540ZPbF, IRFR540ZPbF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRFU540ZPbF, IRFR540ZPbF
Manufacturer: International Rectifier
File Size: 350.61 KB
Datasheet: IRFR540ZPbF-InternationalRectifier.pdf
Description: HEXFET Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IRFU540ZPbF, IRFR540ZPbF.
Please refer to the document for exact specifications by model.

Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Ther

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IRFR540ZPbF HEXFET Power MOSFET International Rectifier

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