IRFS4615PBF - N-Channel HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFS4615PBF
Manufacturer	International Rectifier
File Size	401.85 KB
Description	N-Channel HEXFET Power MOSFET
Datasheet	IRFS4615PBF_InternationalRectifier.pdf

wed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, t.

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Published: Sep 26, 2009 |