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IRFS4620PBF - N-Channel HEXFET Power MOSFET

Features

  • on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 200V 63.7m: 77.5m: 24A D S G G D S D2Pak IRFS4620PbF TO-262 IRFSL4620PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Max. 24 17 100 144 0.96 ± 20 54 -55 to + 175 300 Units A W W/°C V V/ns ID @ TC = 100°C IDM Pulsed Drain Current www.
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