IRFR4615PBF Datasheet (International Rectifier)

IRFR4615PBF, Power MOSFETs

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ.

34m: max.

42m: S ID 33A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free DD S G DPak IRFR4615PbF S D G IPAK IRFU461

IRFR4615PBF Features

* 40 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. 20 D = Duty cycle in avalanche = tav

* f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction