IRFR410 Datasheet (Intersil Corporation)

IRFR410, N-Channel Power MOSFETs

www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and

IRFR410 Features

* 1.5A, 500V

* rDS(ON) = 7.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* High Input Impedance

* 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Sol