IRFP4768PbF - Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFP4768PbF
Manufacturer	International Rectifier ↗
File Size	326.48 KB
Description	Power MOSFET
Datasheet	IRFP4768PbF-InternationalRectifier.pdf

se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/.

📁 IRFP4768PbF Similar Datasheet

Other Datasheets by International Rectifier

Published: Jul 7, 2014 |