Datasheet Specifications
- Part number
- IRFP4768PbF
- Manufacturer
- International Rectifier
- File Size
- 326.48 KB
- Datasheet
- IRFP4768PbF-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Sp.
Features
* se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalancheApplications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dtIRFP4768PbF Distributors
📁 Related Datasheet
📌 All Tags