IRFP470 N-Channel MOSFET

IXYS

Description

MegaMOSTMFET N-Channel Enhancement Mode IRFP 470 VDSS = 500 V ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 I.

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Datasheet Specifications

Part number: IRFP470
Manufacturer: IXYS
File Size: 46.09 KB
Datasheet: IRFP470-IXYS.pdf
Description: N-Channel MOSFET

Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VG

Applications

* l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions.

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IRFP470 N-Channel MOSFET IXYS

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