IRFP254 Datasheet (IXYS) - Standard Power MOSFET

IRFP254, Standard Power MOSFET

Standard Power MOSFET IRFP 254 VDSS = 250 V ID (cont) = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 250 250 ±20 ±30 23 92 23 19 5 190 -55 +150 150 -55 +150 V V V V A A A mJ V/ns W

IRFP254 Features

* l Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching time