IRFP4110PBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFP4110PBF
Manufacturer	International Rectifier
File Size	387.27 KB
Description	HEXFET Power MOSFET
Datasheet	IRFP4110PBF-InternationalRectifier.pdf

is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. Tjmax (assumed as 7. ∆T = Allowable rise in junction temperature, not to exceed 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.
f ZthJC(D, tav) = Transient th.

📁 IRFP4110PBF Similar Datasheet

Other Datasheets by International Rectifier

Published: Jun 10, 2014 |