IRFIZ24N - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRFIZ24N
Manufacturer	International Rectifier
File Size	105.40 KB
Description	Power MOSFET
Datasheet	IRFIZ24N_InternationalRectifier.pdf

IRFIZ24N Product details

Description

l l D VDSS = 55V G S RDS(on) = 0.07Ω ID = 14A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additional insul

Features

2) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M B 3X 0.48 (.019) 0.44 (.017) B 2 .54 (.100) 2X 2.85 (.112 ) 2.65 (.104 ) M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 Fullpak E XAM PLE.

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Published: Apr 16, 2005 |