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IRFIZ24A - Power MOSFET

Samsung

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Datasheet Details

Part number	IRFIZ24A
Manufacturer	Samsung
File Size	208.25 KB
Description	Power MOSFET
Datasheet	IRFIZ24A-Samsung.pdf

IRFIZ24A Product details

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

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Published: Aug 4, 2016 |