IRFIZ14G - Power MOSFET

Vishay Siliconix

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Datasheet Details

Part number	IRFIZ14G
Manufacturer	Vishay Siliconix
File Size	1.04 MB
Description	Power MOSFET
Datasheet	IRFIZ14G_VishaySiliconix.pdf

IRFIZ14G Product details

Description

G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.This isolation is equivalent to using a 100 mic

Features

60 0.20.
Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
175 °C Operating Temperature.
Dynamic dv/dt Rating.
Low Thermal Resistance.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Published: Jan 9, 2012 |