IRF7811APBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF7811APBF
Manufacturer	International Rectifier
File Size	221.55 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7811APBF_InternationalRectifier.pdf

ss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 a.

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Published: Feb 15, 2007 |