IRF7807PbF - HEXFET Chip-Set for DC-DC Converters

International Rectifier

Datasheet Details

Part number	IRF7807PbF
Manufacturer	International Rectifier ↗
File Size	199.46 KB
Description	HEXFET Chip-Set for DC-DC Converters
Datasheet	IRF7807PbF-InternationalRectifier.pdf

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current Symbol VDS VGS I D IDM PD TJ, TSTG I S ISM IRF7807 IRF7807A 30 ±12 8.3 8.3 6.6 6.6 66 66 2.5 1.6.

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Published: Jul 12, 2015 |