IRF6798MTRPBF - HEXFET Power MOSFET plus Schottky Diode

International Rectifier

IRF6798MTRPBF Datasheet Preview — Preview of IRF6798MTRPBF PDF

Datasheet Details

Part number	IRF6798MTRPBF
Manufacturer	International Rectifier ↗
File Size	276.09 KB
Description	HEXFET Power MOSFET plus Schottky Diode
Datasheet	IRF6798MTRPBF_InternationalRectifier.pdf

IRF6798MTRPBF Product details

Description

The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.

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Published: Jun 30, 2010 |