IRF6794MPbF Datasheet (International Rectifier)

IRF6794MPbF, Power MOSFET

The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries use

PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V l Dual Sided Cooling Compatible l Low Package Inductance l Optimized for High Frequency Switching Qg tot 31nC Qgd 11nC Qgs2 4.4nC Qrr 51nC Qoss Vgs(th) 27nC 1.8V l Ideal for CPU

IRF6794MPbF Features

* , Drain-to-Source Current (A) 10000 1000 IRF6794MTRPbF OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1 DC 1msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.0 0.1 10msec 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(th) Gat