IRF6797MPbF - HEXFET Power MOSFET plus Schottky Diode

International Rectifier

IRF6797MPbF Datasheet Preview — Preview of IRF6797MPbF PDF

Datasheet Details

Part number	IRF6797MPbF
Manufacturer	International Rectifier ↗
File Size	235.67 KB
Description	HEXFET Power MOSFET plus Schottky Diode
Datasheet	IRF6797MPbF-InternationalRectifier.pdf

IRF6797MPbF Product details

Description

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRPbF.

📁 IRF6797MPbF Similar Datasheet

IRF6775MTRPbF - DIGITAL AUDIO MOSFET (IRF)
IRF6785MTRPbF - DIGITAL AUDIO MOSFET (IRF)
IRF60B217 - N-Channel MOSFET (INCHANGE)
IRF60R217 - N-Channel MOSFET (INCHANGE)
IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF610L - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

IRF6797MTRPbF - HEXFET Power MOSFET plus Schottky Diode
IRF6794MPbF - Power MOSFET
IRF6794MTRPbF - Power MOSFET
IRF6795MPbF - Power MOSFET
IRF6795MTRPbF - Power MOSFET
IRF6798MPBF - HEXFET Power MOSFET plus Schottky Diode

Published: Oct 12, 2015 |