IRF6797MPbF Datasheet (International Rectifier) - HEXFET Power MOSFET plus Schottky Diode

IRF6797MPbF, HEXFET Power MOSFET plus Schottky Diode

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries us

PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal

IRF6797MPbF Features

* ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRP