IRF6728MPBF Datasheet (International Rectifier)

IRF6728MPBF, Power MOSFET

The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries us

PD - 97568 HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R Typical values (unless otherwise specified) DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible l Ultra Low Package Inductance 28nC 8.7nC 3.1nC 29nC 22nC 1.8V l Optimized for High Frequency Switching l Ideal for C

IRF6728MPBF Features

* 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec 100 10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 0.01 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold