Datasheet Details
| Part number | IRF6621 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 254.49 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6621 Datasheet
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Description
The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.0A 4.3A BOTTOM 9.6A TOP EAS, Single Pulse Avalanche Energy (mJ).