IRF6619TRPbF, IRF6619PbF - DirectFET Power MOSFET

International Rectifier

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IRF6619TRPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6619TRPbF, IRF6619PbF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6619TRPbF, IRF6619PbF
Manufacturer	International Rectifier
File Size	314.09 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6619PbF_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6619TRPbF, IRF6619PbF. Please refer to the document for exact specifications by model.

IRF6619TRPbF Product details

Description

The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

= 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 160 140 ID , Drain Current (A).

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Published: Apr 24, 2010 |