IRF6610 - HEXFET Power MOSFET Silicon Technology

International Rectifier

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Datasheet Details

Part number	IRF6610
Manufacturer	International Rectifier
File Size	266.29 KB
Description	HEXFET Power MOSFET Silicon Technology
Datasheet	IRF6610_InternationalRectifier.pdf

IRF6610 Product details

Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 50 40 30 20 10 0 25 50 75 3.6.

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Published: Apr 25, 2010 |