IRF6611 Datasheet (International Rectifier)

IRF6611, DirectFET Power MOSFET

The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in po

PD - 96978A IRF6611 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching above 1MHz Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 37nC 12nC 3.3nC 16nC 23nC 1.7V Optimized for SyncFET Socket of Sync.

Buck Converter Low Conduction Losses Compatible with Existing