IRF6618 - HEXFET Power MOSFET

International Rectifier

IRF6618 Datasheet Preview — Preview of IRF6618 PDF

Datasheet Details

Part number	IRF6618
Manufacturer	International Rectifier
File Size	234.57 KB
Description	HEXFET Power MOSFET
Datasheet	IRF6618_InternationalRectifier.pdf

IRF6618 Product details

Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

urrent Transformer.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt - -.
+ RG.
dv/dt controlled by RG.
Driver same type as D. U. T.
I SD controlled by Duty Factor "D".
D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Te.

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Published: Apr 16, 2005 |