IRF6617 - HEXFET Power MOSFET

International Rectifier

IRF6617 Datasheet Preview — Preview of IRF6617 PDF

Datasheet Details

Part number	IRF6617
Manufacturer	International Rectifier ↗
File Size	170.61 KB
Description	HEXFET Power MOSFET
Datasheet	IRF6617_InternationalRectifier.pdf

IRF6617 Product details

Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

river Gate Drive + P. W. Period D= P. W. Period VGS=10V.
+ Circuit Layout Considerations.
Low Stray Inductance.
Ground Plane.
Low Leakage Inductance Current Transformer.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt -.
- + RG.
di/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device.

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Published: Apr 16, 2005 |