IRF6616PBF Datasheet (International Rectifier)

IRF6616PBF, Power MOSFET

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.

The DirectFET package is compatible with existing layout geo

IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l Lead-Free l PD - 96100 Typical values (unless otherwise specified) DirectFET Power MOSFET VDSS VGS RDS(on) RDS(on) 40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V Qg tot Qgd 9.4nC Qgs2 2.4nC Qrr

IRF6616PBF Features

* e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 F