IRF6614 - DirectFET Power MOSFET

International Rectifier

IRF6614 Datasheet Preview — Preview of IRF6614 PDF

Datasheet Details

Part number	IRF6614
Manufacturer	International Rectifier ↗
File Size	281.81 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6614_InternationalRectifier.pdf

IRF6614 Product details

Description

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

.00 10.00 100.00 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 40 ID = 250µA 1.5 30 20 1.0 10 0 25 50 75 100 125 150 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature (°C) TJ , Temperature ( °C ).

📁 IRF6614 Similar Datasheet

IRF6643TRPbF - DIGITAL AUDIO MOSFET (IRF)
IRF6644PbF - IR MOSFET (Infineon)
IRF6648PbF - Power MOSFET (Infineon)
IRF6648TRPbF - Power MOSFET (Infineon)
IRF6662PbF - Power MOSFET (IRF)
IRF6662TRPbF - Power MOSFET (IRF)
IRF60B217 - N-Channel MOSFET (INCHANGE)
IRF60R217 - N-Channel MOSFET (INCHANGE)

Other Datasheets by International Rectifier

IRF6614PBF - Power MOSFET
IRF6614TRPBF - Power MOSFET
IRF6610 - HEXFET Power MOSFET Silicon Technology
IRF6611 - DirectFET Power MOSFET
IRF6611PbF - DirectFET Power MOSFET
IRF6611TRPbF - DirectFET Power MOSFET

Published: Apr 13, 2010 |