IRF5Y31N20 Datasheet (International Rectifier)

IRF5Y31N20, Power MOSFET

PD - 94349A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y31N20 200V, N-CHANNEL Product Summary Part Number IRF5Y31N20 BVDSS 200V RDS(on) 0.092Ω ID 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an ex

IRF5Y31N20 Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo