IRF510A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF510A
Manufacturer	Fairchild Semiconductor
File Size	252.81 KB
Description	Advanced Power MOSFET
Datasheet	IRF510A_FairchildSemiconductor.pdf

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ. ) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25.

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Published: Apr 16, 2005 |